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v dss r ds(on) max q g 12v 8.5m ? 27nc parameter typ. max. units r jc junction-to-case ??? 1.7 r ja junction-to-ambient (pcb mount)* ??? 40 c/w r ja junction-to-ambient ??? 110 thermal resistance absolute maximum ratings symbol parameter max. units v ds drain-source voltage 12 v v gs gate-to-source voltage 12 v i d @ t c = 25c continuous drain current, v gs @ 4.5v 84 i d @ t c = 100c continuous drain current, v gs @ 4.5v 60 a i dm pulsed drain current 320 p d @t c = 25c maximum power dissipation 88 w p d @t c = 100c maximum power dissipation 44 w linear derating factor 0. 59 mw/c t j , t stg junction and storage temperature range -55 to + 175 c applications benefits ultra-low gate impedance very low r ds(on) fully characterized avalanche voltage and current high frequency 3.3v and 5v input point- of-load synchronous buck converters power management for netcom, computing and portable applications. d-pak i-pak IRLR3802 irlu3802 IRLR3802 irlu3802 2014-8-26 1 www.kersemi.com
symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. ??? 0.81 1.2 v t j = 25c, i s = 12a, v gs = 0v ??? 0.65 ??? t j = 125c, i s = 12a, v gs = 0v t rr reverse recovery time ??? 52 78 ns t j = 25c, i f = 12a, v r =20v q rr reverse recovery charge ??? 54 81 nc di/dt = 100a/s t rr reverse recovery time ??? 50 75 ns t j = 125c, i f = 12a, v r =20v q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s s d g diode characteristics 84 320 v sd diode forward voltage parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 12 ??? ??? v v gs = 0v, i d = 250a ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.009 ??? v/c reference to 25c, i d = 1ma ??? 6.5 8.5 v gs = 4.5v, i d = 15a ??? ??? 30 v gs = 2.8v, i d = 12a v gs(th) gate threshold voltage 0.6 ??? 1.9 v v ds = v gs , i d = 250a ? v gs(th) / ? t j gate threshold voltage coefficient ??? -3.2 ??? mv/c ??? ??? 100 a v ds = 9.6v, v gs = 0v ??? ??? 250 v ds = 9.6v, v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 200 v gs = 12v gate-to-source reverse leakage ??? ??? -200 na v gs = -12v g fs forward transconductance 31 ??? ??? s v ds = 6.0v, i d = 12a q g total gate charge ??? 27 41 q gs1 pre-vth gate-source charge ??? 3.6 ??? v ds = 6.0v q gs2 post-vth gate-source charge ??? 2.0 ??? v gs = 5.0v q gd gate-to-drain charge ??? 10 ??? nc i d = 6.0a q godr gate charge overdrive ??? 11 ??? see fig.16 q sw switch charge (q gs2 + q gd ) ??? 12 ??? q oss output charge ??? 28 ??? nc v ds = 10v, v gs = 0v t d(on) turn-on delay time ??? 11 ??? v dd = 6.0v, v gs = 4.5v t r rise time ??? 14 ??? ns i d = 12a t d(off) turn-off delay time ??? 21 ??? clamped inductive load t f fall time ??? 17 ??? c iss input capacitance ??? 2490 ??? v gs = 0v c oss output capacitance ??? 2150 ??? pf v ds = 6.0v c rss reverse transfer capacitance ??? 530 ??? ? = 1.0mhz static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current m ? r ds(on) static drain-to-source on-resistance symbol parameter typ. max. units e as single pulse avalanche energy ??? 300 mj i ar avalanche current ??? 20 a avalanche characteristics 2014-8-26 2 www.kersemi.com
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0. 1 1 10 v ds , drain-to-source voltage (v) 0. 01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 25c vgs top 10v 4.5v 3.5v 2.5v 2.3v 2.0v 1.8v bottom 1.5v 0. 1 1 10 v ds , drain-to-source voltage (v) 0. 1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 20s pulse width tj = 175c vgs top 10v 4 .5v 3.5v 2.5v 2.3v 2.0v 1.8v bottom 1.5v 1.0 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 0 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 5.0v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 84a v gs = 4.5v 2014-8-26 3 www.kersemi.com
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 12v i d = 6.0a 0 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0.0 0.5 1.0 1.5 2.0 2.5 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 2014-8-26 4 www.kersemi.com
fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 1e-006 1e-005 0. 0001 0. 001 0. 01 0. 1 t 1 , rectangular pulse duration (sec) 0. 001 0. 01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by package v gs v ds 90% 10% t d(on) t d(off) t f t r v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t 2014-8-26 5 www.kersemi.com
d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 14. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 13. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 1000 2000 3000 4000 5000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j )
2014-8-26 6 www.kersemi.com
fig 15.

for n-channel hexfet power mosfets ? ? ! ? "# $% p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? &'!!() ? &%*+ ? !!(,-- ? +.&+ fig 16. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 2014-8-26 7 www.kersemi.com

6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006). l o g o 3 4 1 2 i r f u 1 2 0 9 1 6 a l o t c o d e a s s e m b l y e x a m p l e : w i t h a s s e m b l y t h i s i s a n i r f r 1 2 0 y e a r 9 = 1 9 9 9 d a t e c o d e l i n e a w e e k 1 6 i n t h e a s s e m b l y l i n e " a " a s s e m b l e d o n w w 1 6 , 1 9 9 9 l o t c o d e 1 2 3 4 p a r t n u m b e r 2014-8-26 8 www.kersemi.com

6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions show n are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018) i r f u 1 2 0 9 1 9 a l o g o a s s e m b l y l o t c o d e 5 6 7 8 e x a m p l e : w i t h a s s e m b l y t h i s i s a n i r f r 1 2 0 w e e k 1 9 l i n e a y e a r 9 = 1 9 9 9 d a t e c o d e p a r t n u m b e r i n t h e a s s e m b l y l i n e " a " a s s e m b l e d o n w w 1 9 , 1 9 9 9 l o t c o d e 5 6 7 8 2014-8-26 9 www.kersemi.com

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.4mh r g = 25 ? , i as = 20a. pulse width 400s; duty cycle 2%. calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. 2014-8-26 10 www.kersemi.com

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